| PART |
Description |
Maker |
| BCR08AS |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
| BCR08AM |
MITSUBISHI SEMICONDUCTOR
LOW POWER USE PLANAR PASSIVATION TYPE
|
RENESAS[Renesas Electronics Corporation]
|
| BCR20KM |
BCR20KM Datasheet 385K/MAR.20.03 BCR20KM数据385K/MAR.20.03
MITSUBISHI SEMICONDUCTOR TRIAC
|
Renesas Electronics Corporation
|
| BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| SEMIX171KH16S |
Rectifier Thyr./Diode Module
|
Semikron International
|
| KIA7812API KIA7805API KIA7807API KIA7806API KIA780 |
BIPOLAR LINEAR INTEGRATED CIRCUIT
SEMICONDUCTOR
SEMICONDUCTOR
|
KEC(Korea Electronics)
|
| MGF0906 MGF0906B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
